{
  "id": "0910.3720",
  "version": "v1",
  "published": "2009-10-20T02:07:38.000Z",
  "updated": "2009-10-20T02:07:38.000Z",
  "title": "Mapping the Dirac point in gated bilayer graphene",
  "authors": [
    "A. Deshpande",
    "W. Bao",
    "Z. Zhao",
    "C. N. Lau",
    "B. J. LeRoy"
  ],
  "comment": "3 pages, 3 figures",
  "journal": "Applied Physics Letters 95, 243502 (2009)",
  "doi": "10.1063/1.3275755",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-10-20T02:07:38.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "68.65.Ac",
      "68.37.Ef",
      "71.20.Tx",
      "61.72.up"
    ],
    "keywords": [
      "dirac point",
      "gated bilayer graphene",
      "scanning tunneling spectroscopy measurements",
      "temperature scanning tunneling spectroscopy",
      "resolved scanning tunneling spectroscopy"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "AIP",
      "journal": "Applied Physics Letters",
      "year": 2009,
      "month": "Dec",
      "volume": 95,
      "number": 24,
      "pages": 243502
    },
    "note": {
      "typesetting": "TeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009ApPhL..95x3502D"
    }
  }
}