{
  "id": "0909.4678",
  "version": "v1",
  "published": "2009-09-25T12:31:51.000Z",
  "updated": "2009-09-25T12:31:51.000Z",
  "title": "Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC",
  "authors": [
    "Martina Cheli",
    "Paolo Michetti",
    "Giuseppe Iannaccone"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-09-25T12:31:51.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "epitaxial graphene",
      "field-effect transistors",
      "performance evaluation",
      "digital applications",
      "design parameter space"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1109/TED.2010.2051487",
      "journal": "IEEE Transactions on Electron Devices",
      "year": 2010,
      "month": "Aug",
      "volume": 57,
      "number": 8,
      "pages": 1936
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010ITED...57.1936C"
    }
  }
}