{
  "id": "0909.4125",
  "version": "v1",
  "published": "2009-09-23T03:02:47.000Z",
  "updated": "2009-09-23T03:02:47.000Z",
  "title": "Quantum Hall effect of the surface states in topological insulator",
  "authors": [
    "Shun-Qing Shen"
  ],
  "comment": "4 pages, 1 figure",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "We study the quantum Hall effect in the surface states of topological insulator in the presence of a perpendicular magnetic field in the framework of edge states. Motion of Dirac fermions will form descrete Landau levels, among which a fully saturated zero mode will have different behaviors near the boundary according to the sign of the effective mass for Dirac fermions. The Hall conductance is quantized to be n (n is an integer) in the unit of e^2/h for a positive mass, n+1 for a negative mass, and n+1/2 for massless fermions. In topological insulator the massive term to the Dirac fermions can be the Zeeman coupling in a magnetic field or be induced by the finite-size effect in an ultrathin film. For example the g-factor of Bi_2Se_3 is positive and give rise to a positive mass term for Dirac fermions. We address experimental realization of the quantum Hall effect in topological insulators.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-09-23T03:02:47.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall effect",
      "topological insulator",
      "surface states",
      "dirac fermions",
      "form descrete landau levels"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009arXiv0909.4125S"
    }
  }
}