{
  "id": "0909.3736",
  "version": "v1",
  "published": "2009-09-21T11:34:07.000Z",
  "updated": "2009-09-21T11:34:07.000Z",
  "title": "Analytical model of 1D Carbon-based Schottky-Barrier Transistors",
  "authors": [
    "Paolo Michetti",
    "Giuseppe Iannaccone"
  ],
  "journal": "IEEE Trans. El. Dev. 57(7) 1616 (2010)",
  "doi": "10.1109/TED.2010.2049219",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.other"
  ],
  "abstract": "Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-09-21T11:34:07.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "1d carbon-based schottky-barrier transistors",
      "analytical model",
      "buttiker probe approach",
      "ffe transport regime",
      "ambipolar ffe transport"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "IEEE Transactions on Electron Devices",
      "year": 2010,
      "month": "Jul",
      "volume": 57,
      "number": 7,
      "pages": 1616
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010ITED...57.1616M"
    }
  }
}