{
  "id": "0909.2857",
  "version": "v1",
  "published": "2009-09-15T19:32:49.000Z",
  "updated": "2009-09-15T19:32:49.000Z",
  "title": "Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot",
  "authors": [
    "M. Xiao",
    "M. G. House",
    "H. W. Jiang"
  ],
  "comment": "11 pages, 4 figures",
  "doi": "10.1103/PhysRevLett.104.096801",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single electron, we find that T1 depends strongly on the applied magnetic field. Possible mechanisms leading to the observed spin relaxation are discussed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-09-15T19:32:49.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.63.Kv",
      "72.25.Rb"
    ],
    "keywords": [
      "silicon mos-based quantum dot",
      "single electron",
      "measurement",
      "spin relaxation time t1",
      "individual electron spins"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2010,
      "month": "Mar",
      "volume": 104,
      "number": 9,
      "pages": "096801"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 11,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010PhRvL.104i6801X"
    }
  }
}