{ "id": "0908.1378", "version": "v1", "published": "2009-08-10T19:56:07.000Z", "updated": "2009-08-10T19:56:07.000Z", "title": "Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots", "authors": [ "I. V. Kucherenko", "V. S. Vinogradov", "N. N. Melnik", "L. V. Arapkina", "V. A. Chapnin", "K. V. Chizh", "V. A. Yuryev" ], "comment": "Reported at the 16th Int. Symp. \"Nanostructures: Physics and Technology\", Vladivostok, Russia, July 14-18, 2008", "journal": "Proc. 16th Int. Symp. \"Nanostructures: Physics and Technology\", Vladivostok, Russia, July 14-18, 2008", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci", "physics.optics" ], "abstract": "We used Raman scattering for study the phonon modes of self-organized Ge/Si quantum dots, grown by a molecular-beam epitaxy method. It is revealed, that Ge-Ge and Si-Ge vibrational modes considerably intensify at excitation of exciton between the {Lambda}3 valence and {Lanbda}1 conduction bands (transitions E1 and E1+{Delta}1), that allows to observe Raman scattering spectrum from extremely small volumes of Ge, even from one layer of quantum dots with the layer thickness of ~ 10 A. It is shown that Si diffuses into the Ge quantum dots from the Si spacer layers forming Ge_xSi_{1-x} solid solution, and Si concentration was estimated. It is revealed, that the frequency of Ge-Ge mode decreases in 10 1/cm at decreasing of the Ge layer thickness from 10 up to 6 A as a result of phonon size confinement effect.", "revisions": [ { "version": "v1", "updated": "2009-08-10T19:56:07.000Z" } ], "analyses": { "keywords": [ "raman spectra", "quantum confinement", "vibrational modes considerably intensify", "interdiffusion", "heterostructures" ], "tags": [ "journal article" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2009arXiv0908.1378K" } } }