{
  "id": "0908.0557",
  "version": "v1",
  "published": "2009-08-04T22:16:24.000Z",
  "updated": "2009-08-04T22:16:24.000Z",
  "title": "Theory and design of quantum cascade lasers in (111) n-type Si/SiGe",
  "authors": [
    "A. Valavanis",
    "L. Lever",
    "C. A. Evans",
    "Z. Ikonić",
    "R. W. Kelsall"
  ],
  "comment": "7 pages, 6 figures",
  "journal": "Phys. Rev. B 78, 035420 (2008)",
  "doi": "10.1103/PhysRevB.78.035420",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 angstroms across interfaces is tolerable.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-08-04T22:16:24.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.43.Cd",
      "73.61.Cw",
      "78.45.+h",
      "78.67.Pt"
    ],
    "keywords": [
      "quantum cascade lasers",
      "ge interdiffusion length",
      "predict net gain",
      "n-type si/sige heterostructures",
      "large band offset"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2008,
      "month": "Jul",
      "volume": 78,
      "number": 3,
      "pages": "035420"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvB..78c5420V"
    }
  }
}