{
  "id": "0907.3952",
  "version": "v1",
  "published": "2009-07-22T23:42:52.000Z",
  "updated": "2009-07-22T23:42:52.000Z",
  "title": "Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride",
  "authors": [
    "Oleg V. Yazyev",
    "Alfredo Pasquarello"
  ],
  "comment": "5 pages",
  "journal": "Phys. Rev. B 80, 035408 (2009)",
  "doi": "10.1103/PhysRevB.80.035408",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport properties of such junctions based on structurally well defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-07-22T23:42:52.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hexagonal boron nitride",
      "magnetoresistive junctions",
      "ultimate thickness covalent spacers",
      "hcp ferromagnetic transition metals",
      "low resistance area products"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009arXiv0907.3952Y"
    }
  }
}