{
  "id": "0907.1261",
  "version": "v1",
  "published": "2009-07-07T17:06:20.000Z",
  "updated": "2009-07-07T17:06:20.000Z",
  "title": "Multi-Band Mobility in Semiconducting Carbon Nanotubes",
  "authors": [
    "Y. Zhao",
    "A. Liao",
    "E. Pop"
  ],
  "comment": "accepted in IEEE Electron Device Letters",
  "journal": "IEEE Electron Device Letters vol. 30, p. 1078 (2009)",
  "doi": "10.1109/LED.2009.2027615",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We present new data and a compact mobility model for single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest the room temperature mobility does not exceed 10,000 cm2/V.s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-07-07T17:06:20.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "semiconducting carbon nanotubes",
      "multi-band mobility",
      "inelastic collision mean free paths",
      "single-wall carbon nanotubes",
      "compact mobility model"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "IEEE Electron Device Letters",
      "year": 2009,
      "month": "Oct",
      "volume": 30,
      "number": 10,
      "pages": 1078
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009IEDL...30.1078Z"
    }
  }
}