{
  "id": "0904.3017",
  "version": "v1",
  "published": "2009-04-20T12:18:20.000Z",
  "updated": "2009-04-20T12:18:20.000Z",
  "title": "Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects",
  "authors": [
    "M. Wimmer",
    "M. Lobenhofer",
    "J. Moser",
    "A. Matos-Abiague",
    "D. Schuh",
    "W. Wegscheider",
    "J. Fabian",
    "K. Richter",
    "D. Weiss"
  ],
  "comment": "5 pages, 3 figures",
  "journal": "Phys. Rev. B 80, 121301(R) (2009)",
  "doi": "10.1103/PhysRevB.80.121301",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-04-20T12:18:20.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.25.Dc",
      "75.47.-m"
    ],
    "keywords": [
      "tunneling anisotropic magnetoresistance",
      "orbital effects",
      "fe/gaas/au junctions",
      "magnetic field",
      "epitaxially grown fe/gaas/au tunnel junctions"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2009,
      "month": "Sep",
      "volume": 80,
      "number": 12,
      "pages": 121301
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhRvB..80l1301W"
    }
  }
}