{ "id": "0904.1996", "version": "v3", "published": "2009-04-13T19:51:52.000Z", "updated": "2009-09-04T21:14:34.000Z", "title": "Breakdown of the N=0 Quantum Hall State in graphene: two insulating regimes", "authors": [ "L. Zhang", "J. Camacho", "H. Cao", "Y. P. Chen", "M. Khodas", "D. Kharzeev", "A. Tsvelik", "T. Valla", "I. A. Zaliznyak" ], "comment": "4 pages, 4 figures, revised version", "journal": "Phys. Rev. B 80, 241412 (2009)", "doi": "10.1103/PhysRevB.80.241412", "categories": [ "cond-mat.mes-hall", "cond-mat.str-el" ], "abstract": "We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in resistivities $\\rho_{xx},|\\rho_{xy}|$ with decreasing Landau level filling for $\\nu < 2$, where we identify two insulating regimes. For $1 \\gtrsim |\\nu| \\gtrsim 1/2$ we find an exponential increase of $\\rho_{xx,xy} \\sim e^{a(H-H_c)}$ within the range up to several resistance quanta $R_K$, while the Hall effect gradually disappears, consistent with the Hall insulator (HI) with local transport. Then, at $\\nu \\approx 1/2$ a cusp in $\\rho_{xx}(H)$ followed by an onset of even faster growth indicates transition to a collective insulator (CI) state. The likely candidate for this state is a pinned Wigner crystal.", "revisions": [ { "version": "v3", "updated": "2009-09-04T21:14:34.000Z" } ], "analyses": { "subjects": [ "73.43.-f", "71.70.Di", "73.63.-b" ], "keywords": [ "quantum hall state", "insulating regimes", "unusual quantum hall effect", "charge neutrality point", "high-mobility graphene sample" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2009, "month": "Dec", "volume": 80, "number": 24, "pages": 241412 }, "note": { "typesetting": "TeX", "pages": 4, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2009PhRvB..80x1412Z" } } }