{
  "id": "0904.0948",
  "version": "v1",
  "published": "2009-04-06T15:07:51.000Z",
  "updated": "2009-04-06T15:07:51.000Z",
  "title": "Gap opening in the zeroth Landau level of graphene",
  "authors": [
    "A. J. M. Giesbers",
    "L. A. Ponomarenko",
    "K. S. Novoselov",
    "A. K. Geim",
    "M. I. Katsnelson",
    "J. C. Maan",
    "U. Zeitler"
  ],
  "comment": "4 pages, 3 figures",
  "journal": "Physical Review B 80, 201430(R) (2009).",
  "doi": "10.1103/PhysRevB.80.201403",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We have measured a strong increase of the low-temperature resistivity $\\rho_{xx}$ and a zero-value plateau in the Hall conductivity $\\sigma_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $\\rho_{xx}$ and the anomalous $\\nu=0$ plateau in $\\sigma_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-04-06T15:07:51.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.43.-f",
      "73.63.-b",
      "71.70.Di"
    ],
    "keywords": [
      "zeroth landau level",
      "gap opening",
      "spin-split zero-energy landau level",
      "lowest landau level",
      "high magnetic fields"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2009,
      "month": "Nov",
      "volume": 80,
      "number": 20,
      "pages": 201403
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhRvB..80t1403G"
    }
  }
}