{
  "id": "0903.1130",
  "version": "v1",
  "published": "2009-03-05T23:33:46.000Z",
  "updated": "2009-03-05T23:33:46.000Z",
  "title": "Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene",
  "authors": [
    "Wei Han",
    "W. H. Wang",
    "K. Pi",
    "K. M. McCreary",
    "W. Bao",
    "Yan Li",
    "F. Miao",
    "C. N. Lau",
    "R. K. Kawakami"
  ],
  "comment": "To appear in PRL",
  "journal": "Phys. Rev. Lett. 102, 137205 (2009)",
  "doi": "10.1103/PhysRevLett.102.137205",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-03-05T23:33:46.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "75.47.-m",
      "72.25.Hg",
      "73.63.-b",
      "85.75.-d"
    ],
    "keywords": [
      "single-layer graphene",
      "electron-hole asymmetry",
      "spin injection",
      "non-local spin valve measurements",
      "gate voltage dependence"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2009,
      "month": "Apr",
      "volume": 102,
      "number": 13,
      "pages": 137205
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhRvL.102m7205H"
    }
  }
}