{ "id": "0901.2762", "version": "v2", "published": "2009-01-19T09:07:52.000Z", "updated": "2009-03-13T07:00:27.000Z", "title": "Electronic Structures and Surface States of Topological Insulator Bi$_{1-x}$Sb$_{x}$", "authors": [ "Hai-Jun Zhang", "Chao-Xing Liu", "Xiao-Liang Qi", "Xiao-Yu Deng", "Xi Dai", "Shou-Cheng Zhang", "Zhong Fang" ], "comment": "8 pages, 11 figures", "journal": "Phys. Rev. B 80, 085307 (2009)", "doi": "10.1103/PhysRevB.80.085307", "categories": [ "cond-mat.mes-hall" ], "abstract": "We investigate the electronic structures of the alloyed Bi$_{1-x}$Sb$_x$ compounds based on first-principle calculations including spin-orbit coupling (SOC), and calculate the surface states of semi-infinite systems using maximally localized Wannier function (MLWF). From the calculated results, we analyze the topological nature of Bi$_{1-x}$Sb$_x$, and found the followings: (1) pure Bi crystal is topologically trivial; (2) topologically non-trivial phase can be realized by reducing the strength of SOC via Sb doping; (3) the indirect bulk band gap, which is crucial to realize the true bulk insulating phase, can be enhanced by uniaxial pressure along c axis. (4) The calculated surface states can be compared with experimental results, which confirms the topological nature; (5) We predict the spin-resolved Fermi surfaces and showed the vortex structures, which should be examined by future experiments.", "revisions": [ { "version": "v2", "updated": "2009-03-13T07:00:27.000Z" } ], "analyses": { "subjects": [ "71.15.Dx", "71.18.+y", "73.20.At", "73.61.Le" ], "keywords": [ "surface states", "topological insulator bi", "electronic structures", "indirect bulk band gap", "pure bi crystal" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2009, "month": "Aug", "volume": 80, "number": 8, "pages": "085307" }, "note": { "typesetting": "TeX", "pages": 8, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2009PhRvB..80h5307Z" } } }