{
  "id": "0812.4325",
  "version": "v1",
  "published": "2008-12-23T01:59:56.000Z",
  "updated": "2008-12-23T01:59:56.000Z",
  "title": "Frequency doubling and memory effects in the Spin Hall Effect",
  "authors": [
    "Yu. V. Pershin",
    "M. Di Ventra"
  ],
  "journal": "Phys. Rev. B 79, 153307 (2009)",
  "doi": "10.1103/PhysRevB.79.153307",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-12-23T01:59:56.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.25.Dc",
      "71.70.Ej"
    ],
    "keywords": [
      "memory effects",
      "frequency doubling",
      "inverse spin hall effect",
      "spin hall effect results",
      "semiconductor spintronic systems"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2009,
      "month": "Apr",
      "volume": 79,
      "number": 15,
      "pages": 153307
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhRvB..79o3307P"
    }
  }
}