{ "id": "0812.1694", "version": "v3", "published": "2008-12-09T13:51:51.000Z", "updated": "2009-10-05T10:47:43.000Z", "title": "Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime", "authors": [ "Paolo Michetti", "Giorgio Mugnaini", "Giuseppe Iannaccone" ], "journal": "IEEE Trans. El. Dev. 56 (7), 1402 (2009)", "doi": "10.1109/TED.2009.2021720", "categories": [ "cond-mat.mes-hall" ], "abstract": "The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the MonteCarlo solution of the Boltzmann transport equation or in the introduction of dissipation in quantum transport descriptions. In this paper we propose a very simple analytical model to seamlessly cover the whole range of transport regimes in generic quasi-one dimensional field-effect transistors, and apply it to silicon nanowire transistors. The model is based on describing a generic transistor as a chain of ballistic nanowire transistors in series, or as the series of a ballistic transistor and a drift-diffusion transistor operating in the triode region. As an additional result, we find a relation between the mobility and the mean free path, that has deep consequences on the understanding of transport in nanoscale devices.", "revisions": [ { "version": "v3", "updated": "2009-10-05T10:47:43.000Z" } ], "analyses": { "keywords": [ "dissipative transport regime", "analytical model", "nanowire fets", "partially ballistic", "generic quasi-one dimensional field-effect transistors" ], "tags": [ "journal article" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2008arXiv0812.1694M" } } }