{
  "id": "0812.0123",
  "version": "v2",
  "published": "2008-11-30T05:47:27.000Z",
  "updated": "2009-02-24T17:32:18.000Z",
  "title": "On the Possibility of an Electronic-structure Modulation Transistor",
  "authors": [
    "Hassan Raza",
    "Tehseen Z. Raza",
    "Tuo-Hung Hou",
    "Edwin C. kan"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2009-02-24T17:32:18.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "possibility",
      "novel electronic-structure modulation transistor",
      "non-equilibrium greens function formalism",
      "post-cmos logic applications",
      "3kt/decade thermal limit"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008arXiv0812.0123R"
    }
  }
}