{ "id": "0811.2960", "version": "v1", "published": "2008-11-18T17:56:08.000Z", "updated": "2008-11-18T17:56:08.000Z", "title": "Controlling the efficiency of spin injection into graphene by carrier drift", "authors": [ "C. Józsa", "M. Popinciuc", "N. Tombros", "H. T. Jonkman", "B. J. van Wees" ], "comment": "4 pages, 3 color figures", "journal": "Phys. Rev. B 79, 081402(R) (2009)", "doi": "10.1103/PhysRevB.79.081402", "categories": [ "cond-mat.mes-hall" ], "abstract": "Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.", "revisions": [ { "version": "v1", "updated": "2008-11-18T17:56:08.000Z" } ], "analyses": { "subjects": [ "72.25.Hg", "73.63.-b" ], "keywords": [ "carrier drift", "spin injection", "temperature non-local spin valve measurements", "room temperature non-local spin valve", "efficiency" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2009, "month": "Feb", "volume": 79, "number": 8, "pages": "081402" }, "note": { "typesetting": "TeX", "pages": 4, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2009PhRvB..79h1402J" } } }