{
  "id": "0810.4064",
  "version": "v1",
  "published": "2008-10-22T13:15:09.000Z",
  "updated": "2008-10-22T13:15:09.000Z",
  "title": "Quantum resistance metrology in graphene",
  "authors": [
    "A. J. M. Giesbers",
    "G. Rietveld",
    "E. Houtzager",
    "U. Zeitler",
    "R. Yang",
    "K. S. Novoselov",
    "A. K. Geim",
    "J. C. Maan"
  ],
  "journal": "Appl. Phys. Lett. 93, 222109 (2008)",
  "doi": "10.1063/1.3043426",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We have performed a metrological characterization of the quantum Hall resistance in a 1 $\\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\\nu=\\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$\\Omega$ upto 2 $\\mu$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ \\mu$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-10-22T13:15:09.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.43.-f",
      "06.20.-f",
      "73.23.-b"
    ],
    "keywords": [
      "quantum resistance metrology",
      "quantum hall plateaus vanishes",
      "quantum hall regime",
      "quantum hall resistance",
      "relatively high contact resistances"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2008,
      "month": "Dec",
      "volume": 93,
      "number": 22,
      "pages": 222109
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008ApPhL..93v2109G"
    }
  }
}