{
  "id": "0810.0128",
  "version": "v1",
  "published": "2008-10-01T10:56:58.000Z",
  "updated": "2008-10-01T10:56:58.000Z",
  "title": "On the possibility of tunable-gap bilayer graphene FET",
  "authors": [
    "G. Fiori",
    "G. Iannaccone"
  ],
  "comment": "10 pages, 3 figures, submitted to IEEE EDL",
  "journal": "IEEE Electron Device Letters, Vol. 30, pp. 261-264, 2009.",
  "doi": "10.1109/LED.2008.2010629",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-10-01T10:56:58.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "possibility",
      "tunable-gap bilayer graphene fet exploiting",
      "cmos device operation",
      "independent gate operation",
      "sufficiently large ion/ioff ratio"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "IEEE Electron Device Letters",
      "year": 2009,
      "month": "Mar",
      "volume": 30,
      "number": 3,
      "pages": 261
    },
    "note": {
      "typesetting": "TeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009IEDL...30..261F"
    }
  }
}