{
  "id": "0809.0626",
  "version": "v3",
  "published": "2008-09-03T13:49:31.000Z",
  "updated": "2008-09-08T15:32:05.000Z",
  "title": "Gate control of the tunneling magnetoresistance in double-barrier junctions",
  "authors": [
    "J. Peralta-Ramos",
    "A. M. Llois"
  ],
  "comment": "Paper was written Feb. 2008. v2: minor corrections (misspelled author's name,introduction); v3: two references added",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions' TMR due to the tuning or untuning of conductance resonances mediated by quantum well states. The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2008-09-08T15:32:05.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "tunneling magnetoresistance",
      "gate control",
      "double-barrier junctions",
      "gate voltage",
      "in-between fe layer slab"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008arXiv0809.0626P"
    }
  }
}