{
  "id": "0807.3880",
  "version": "v1",
  "published": "2008-07-24T13:17:19.000Z",
  "updated": "2008-07-24T13:17:19.000Z",
  "title": "Effect of Coulomb scattering on graphene conductivity",
  "authors": [
    "V. Vyurkov",
    "V. Ryzhii"
  ],
  "comment": "4 pages, 3 figures, to be published in JETP Lett",
  "doi": "10.1134/S0021364008170074",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system where both electron and hole densities exactly coincide) is defined by strong electron-hole scattering. It has a universal value independent of temperature. We give an explicit derivation based on scaling theory. When there is even a small discrepancy in electron and hole densities caused by applied gate voltage the conductivity is determined by both strong electron-hole scattering and weak external scattering: on defects or phonons. We suggest that a density of charged defects (occupancy of defects) depends on Fermi energy to explain a sub-linear dependence of conductivity on a fairly high gate voltage observed in experiments. We also eliminate contradictions between experimental data obtained in deposited and suspended graphene structures regarding graphene conductivity.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-07-24T13:17:19.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.63.-b",
      "81.05.Uw"
    ],
    "keywords": [
      "coulomb scattering",
      "gate voltage",
      "graphene structures regarding graphene conductivity",
      "field effect transistor structures",
      "hole densities"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Soviet Journal of Experimental and Theoretical Physics Letters",
      "year": 2008,
      "month": "Nov",
      "volume": 88,
      "number": 5,
      "pages": 322
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008JETPL..88..322V"
    }
  }
}