{
  "id": "0807.2709",
  "version": "v2",
  "published": "2008-07-17T07:02:41.000Z",
  "updated": "2009-04-27T08:08:27.000Z",
  "title": "Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field",
  "authors": [
    "I. L. Drichko",
    "I. Yu. Smirnov",
    "A. V. Suslov",
    "O. A. Mironov",
    "D. R. Leadley"
  ],
  "comment": "revised: included AC conductivity experiments to study the role of localized state in transport; total 6 pages, 7 figures. Accepted PRB; to appear vol.79, Issue 20",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report the results of an experimental study of the magnetoresistance $\\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\\times10^{10}$ cm$^{-2}$ and $p$=2$\\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\\parallel}$ against the current $I$: $B_{\\parallel} \\perp I$ and $B_{\\parallel} \\parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $\\rho_{xx}$ demonstrates the metallic characteristics ($d \\rho_{xx}/dT>$0). However, at $B_{\\parallel}$ =7.2 T the derivative $d \\rho_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\\parallel} \\cong$ 13 T there is a transition from the dependence $\\ln(\\Delta\\rho_{xx} / \\rho_{0})\\propto B_{\\parallel}^2$ to the dependence $\\ln(\\Delta\\rho_{xx} / \\rho_{0})\\propto B_{\\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2009-04-27T08:08:27.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.23.-b",
      "73.43.Qt"
    ],
    "keywords": [
      "parallel magnetic field",
      "in-plane magnetic field",
      "si/sige/si quantum",
      "large magnetoresistance",
      "magnetic field range"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1103/PhysRevB.79.205310",
      "journal": "Physical Review B",
      "year": 2009,
      "month": "May",
      "volume": 79,
      "number": 20,
      "pages": 205310
    },
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009PhRvB..79t5310D"
    }
  }
}