{
  "id": "0807.2445",
  "version": "v1",
  "published": "2008-07-15T20:00:05.000Z",
  "updated": "2008-07-15T20:00:05.000Z",
  "title": "Disorder-induced tail states in a gapped bilayer graphene",
  "authors": [
    "V. V. Mkhitaryan",
    "M. E. Raikh"
  ],
  "comment": "7 pages, 4 figures",
  "journal": "Phys. Rev. B 78, 195409 (2008)",
  "doi": "10.1103/PhysRevB.78.195409",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $\\nu(\\epsilon)\\propto \\exp(-|\\epsilon/\\epsilon_t|^{3/2})$, where the characteristic tail energy, $\\epsilon_t$, scales with the concentration of impurities, $n_i$, as $n_i^{2/3}$. While the bare energy spectrum is characterized by two energies: the bias-induced gap, $V$, and interlayer tunneling, $t_{\\perp}$, the tail, $\\epsilon_t$, contains a {\\it single} combination $V^{1/3}t_{\\perp}^{2/3}$. We show that the above expression for $\\nu(\\epsilon)$ in the tail actually applies all the way down to the mid-gap.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-07-15T20:00:05.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "71.55.Jv",
      "71.23.-k",
      "73.20.Hb",
      "73.21.Ac"
    ],
    "keywords": [
      "gapped bilayer graphene",
      "disorder-induced tail states",
      "in-gap fluctuation states",
      "characteristic tail energy",
      "bare energy spectrum"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2008,
      "month": "Nov",
      "volume": 78,
      "number": 19,
      "pages": 195409
    },
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvB..78s5409M"
    }
  }
}