{
  "id": "0806.3900",
  "version": "v1",
  "published": "2008-06-24T14:04:46.000Z",
  "updated": "2008-06-24T14:04:46.000Z",
  "title": "Temperature dependence of ambipolar diffusion in silicon-on-insulator",
  "authors": [
    "Hui Zhao"
  ],
  "journal": "Appl. Phys. Lett. 92, 112104 (2008)",
  "doi": "10.1063/1.2898711",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned below the bandgap, with 200-fs temporal and 3-micrometer spatial resolution. From sample temperatures of 250 K to 400 K, the ambipolar diffusivity decreases, and is similar to reported values of bulk silicon. Cooling the sample from 250 K to 90 K, a decrease of ambipolar diffusivity is observed, indicating important influences of defects and residual stress on carrier diffusion. No detectable density dependence of ambipolar diffusivity is observed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-06-24T14:04:46.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.40.Qv",
      "66.30.-h",
      "78.47.J-"
    ],
    "keywords": [
      "temperature dependence",
      "ambipolar diffusion",
      "ambipolar diffusivity decreases",
      "indirect interband absorption",
      "electron-hole pairs"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2008,
      "month": "Mar",
      "volume": 92,
      "number": 11,
      "pages": 112104
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008ApPhL..92k2104Z"
    }
  }
}