{ "id": "0806.0436", "version": "v1", "published": "2008-06-03T05:29:47.000Z", "updated": "2008-06-03T05:29:47.000Z", "title": "Ballistic Hot Electron Transport in Graphene", "authors": [ "Wang-Kong Tse", "E. H. Hwang", "S. Das Sarma" ], "comment": "4 pages", "journal": "Appl. Phys. Lett. 93, 023128 (2008)", "doi": "10.1063/1.2956669", "categories": [ "cond-mat.mes-hall" ], "abstract": "We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time $\\tau \\sim 10^{-2}-10^{-1} \\mathrm{ps}$ and the mean free path $l \\sim 10-10^2 \\mathrm{nm}$ for electron densities $n = 10^{12}-10^{13} \\mathrm{cm}^{-2}$. In particular, we find that the mean free path exhibits a finite jump at the phonon energy $200 \\mathrm{meV}$ due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.", "revisions": [ { "version": "v1", "updated": "2008-06-03T05:29:47.000Z" } ], "analyses": { "subjects": [ "73.23.Ad", "72.20.Ht", "73.63.-b", "71.38.-k", "63.22.-m", "61.48.-c" ], "keywords": [ "ballistic hot electron transport", "inelastic scattering", "electron-phonon interaction", "carrier mean free path", "energetic hot electrons" ], "tags": [ "journal article" ], "publication": { "journal": "Applied Physics Letters", "year": 2008, "month": "Jul", "volume": 93, "number": 2, "pages": "023128" }, "note": { "typesetting": "TeX", "pages": 4, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2008ApPhL..93b3128T" } } }