{ "id": "0806.0277", "version": "v1", "published": "2008-06-02T13:47:36.000Z", "updated": "2008-06-02T13:47:36.000Z", "title": "Optical properties of graphene antidot lattices", "authors": [ "Thomas G. Pedersen", "Christian Flindt", "Jesper Pedersen", "Antti-Pekka Jauho", "Niels Asger Mortensen", "Kjeld Pedersen" ], "comment": "11 pages, 9 figures, accepted for publication in Phys. Rev. B", "journal": "Phys. Rev. B 77, 245431 (2008)", "doi": "10.1103/PhysRevB.77.245431", "categories": [ "cond-mat.mes-hall" ], "abstract": "Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.", "revisions": [ { "version": "v1", "updated": "2008-06-02T13:47:36.000Z" } ], "analyses": { "subjects": [ "78.67.-n", "73.22.-f", "73.61.Wp" ], "keywords": [ "graphene antidot lattices", "optical properties", "address realistic experimental situations", "optoelectronic applications requiring gapped semiconductor", "applications requiring gapped semiconductor materials" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2008, "month": "Jun", "volume": 77, "number": 24, "pages": 245431 }, "note": { "typesetting": "TeX", "pages": 11, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2008PhRvB..77x5431P" } } }