{
  "id": "0805.3998",
  "version": "v1",
  "published": "2008-05-26T14:56:46.000Z",
  "updated": "2008-05-26T14:56:46.000Z",
  "title": "Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning",
  "authors": [
    "K Y Wang",
    "A C Irvine",
    "J Wunderlich",
    "K W Edmonds",
    "A W Rushforth",
    "R P Campion",
    "C T Foxon",
    "D A Williams",
    "B L Gallagher"
  ],
  "comment": "12 pages, 12 figures, submitted to New Journal of Physics",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-05-26T14:56:46.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "current-driven domain wall motion",
      "magnetic reversal",
      "external field",
      "extrinsic pinning",
      "hall bar"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 12,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008arXiv0805.3998Y"
    }
  }
}