{
  "id": "0805.1830",
  "version": "v1",
  "published": "2008-05-13T19:41:00.000Z",
  "updated": "2008-05-13T19:41:00.000Z",
  "title": "Temperature dependent transport in suspended graphene",
  "authors": [
    "K. I. Bolotin",
    "K. J. Sikes",
    "J. Hone",
    "H. L. Stormer",
    "P. Kim"
  ],
  "doi": "10.1103/PhysRevLett.101.096802",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^-2.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2008-05-13T19:41:00.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.50.-h",
      "72.10.-d"
    ],
    "keywords": [
      "temperature dependent transport",
      "charge neutral point",
      "strongly temperature dependent",
      "resistivity increases",
      "acoustic phonons"
    ],
    "tags": [
      "journal article",
      "famous paper"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2008,
      "month": "Aug",
      "volume": 101,
      "number": 9,
      "pages": "096802"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvL.101i6802B"
    }
  }
}