{
  "id": "0802.2628",
  "version": "v2",
  "published": "2008-02-19T11:42:51.000Z",
  "updated": "2008-04-14T14:47:05.000Z",
  "title": "Electronic spin drift in graphene field effect transistors",
  "authors": [
    "C. Jozsa",
    "M. Popinciuc",
    "N. Tombros",
    "H. T. Jonkman",
    "B. J. van Wees"
  ],
  "comment": "4 figures",
  "doi": "10.1103/PhysRevLett.100.236603",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \\simeq 3.5 \\times 10^{16}$ m$^{-2}$), for DC fields of about $\\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2008-04-14T14:47:05.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.25.Hg",
      "73.63.-b"
    ],
    "keywords": [
      "graphene field effect transistors",
      "electronic spin drift",
      "single layer graphene spin valves",
      "field effect transport geometry",
      "drift effect"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2008,
      "month": "Jun",
      "volume": 100,
      "number": 23,
      "pages": 236603
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvL.100w6603J"
    }
  }
}