{
  "id": "0711.3206",
  "version": "v3",
  "published": "2007-11-20T20:43:09.000Z",
  "updated": "2008-02-21T09:15:03.000Z",
  "title": "Shot Noise in Graphene",
  "authors": [
    "L. DiCarlo",
    "J. R. Williams",
    "Yiming Zhang",
    "D. T. McClure",
    "C. M. Marcus"
  ],
  "comment": "related papers available at http://marcuslab.harvard.edu",
  "journal": "Phys. Rev. Lett. 100, 156801 (2008).",
  "doi": "10.1103/PhysRevLett.100.156801",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2008-02-21T09:15:03.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.61.Wp",
      "73.50.Td"
    ],
    "keywords": [
      "shot noise",
      "fano factor remains constant",
      "multi-layer graphene devices",
      "high carrier density",
      "charge-neutrality point"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2008,
      "month": "Apr",
      "volume": 100,
      "number": 15,
      "pages": 156801
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvL.100o6801D"
    }
  }
}