{ "id": "0710.3725", "version": "v3", "published": "2007-10-19T15:56:52.000Z", "updated": "2007-11-01T21:43:41.000Z", "title": "Single-electron quantum dot in Si/SiGe with integrated charge-sensing", "authors": [ "C. B. Simmons", "Madhu Thalakulam", "Nakul Shaji", "Levente J. Klein", "Hua Qin", "R. H. Blick", "D. E. Savage", "M. G. Lagally", "S. N. Coppersmith", "M. A. Eriksson" ], "comment": "3 pages, 3 figures, accepted version, to appear in Applied Physics Letters", "journal": "Appl Phys Lett (2007) vol. 91 pp. 213103", "doi": "10.1063/1.2816331", "categories": [ "cond-mat.mes-hall" ], "abstract": "Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.", "revisions": [ { "version": "v3", "updated": "2007-11-01T21:43:41.000Z" } ], "analyses": { "subjects": [ "73.63.Kv", "73.40.Lq" ], "keywords": [ "single-electron quantum dot", "integrated charge-sensing", "confirm single-electron occupancy", "integrated quantum point contact", "semiconductor spin qubits" ], "tags": [ "journal article" ], "publication": { "journal": "Applied Physics Letters", "year": 2007, "month": "Nov", "volume": 91, "number": 21, "pages": 213103 }, "note": { "typesetting": "TeX", "pages": 3, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2007ApPhL..91u3103S" } } }