{
  "id": "0707.4475",
  "version": "v1",
  "published": "2007-07-30T20:03:58.000Z",
  "updated": "2007-07-30T20:03:58.000Z",
  "title": "Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime",
  "authors": [
    "Yu. V. Pershin",
    "M. Di Ventra"
  ],
  "journal": "Phys. Rev. B 77, 073301 (2008)",
  "doi": "10.1103/PhysRevB.77.073301",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2007-07-30T20:03:58.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.23.Hk",
      "72.25.Dc",
      "72.25.Mk"
    ],
    "keywords": [
      "spin blockade regime",
      "current-voltage characteristics",
      "semiconductor/ferromagnet junctions",
      "nonmagnetic semiconductor/perfect ferromagnet junctions",
      "current density"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2008,
      "month": "Feb",
      "volume": 77,
      "number": 7,
      "pages": "073301"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvB..77g3301P"
    }
  }
}