{
  "id": "0706.4425",
  "version": "v3",
  "published": "2007-06-29T14:10:46.000Z",
  "updated": "2007-10-29T15:46:50.000Z",
  "title": "A simple model of Coulomb disorder and screening in graphene",
  "authors": [
    "B. I. Shklovskii"
  ],
  "comment": "2.5 pages, twice longer than previous version",
  "doi": "10.1103/PhysRevB.76.233411",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.dis-nn"
  ],
  "abstract": "We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such disorder creates two-dimensional concentration $n_0 \\sim N^{2/3}$ of electrons and holes in graphene. Electrons and holes reside in alternating in space puddles of the size $R_0 \\sim N^{-1/3}$. A typical puddle has only one or two carriers in agreement with recent scanning single electron transistor experiment.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2007-10-29T15:46:50.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "81.05.Uw",
      "73.21.Ac"
    ],
    "keywords": [
      "simple model",
      "coulomb disorder",
      "disorder creates two-dimensional concentration",
      "scanning single electron transistor experiment",
      "silicon oxide substrate"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2007,
      "month": "Dec",
      "volume": 76,
      "number": 23,
      "pages": 233411
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2007PhRvB..76w3411S"
    }
  }
}