{
  "id": "0706.2883",
  "version": "v1",
  "published": "2007-06-19T23:06:31.000Z",
  "updated": "2007-06-19T23:06:31.000Z",
  "title": "Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires",
  "authors": [
    "S. Roddaro",
    "A. Fuhrer",
    "C. Fasth",
    "L. Samuelson",
    "J. Xiang",
    "C. M. Lieber"
  ],
  "comment": "5 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2007-06-19T23:06:31.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hole quantum dots",
      "strong g-factor anisotropy",
      "ge/si nanowires",
      "undoped ge/si core-shell nanowire heterostructures"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2007arXiv0706.2883R"
    }
  }
}