{
  "id": "0705.3239",
  "version": "v2",
  "published": "2007-05-22T19:34:52.000Z",
  "updated": "2007-05-22T21:08:16.000Z",
  "title": "Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene",
  "authors": [
    "Sungjae Cho",
    "Michael S. Fuhrer"
  ],
  "doi": "10.1103/PhysRevB.77.081402",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the charge-neutrality point rho_xx(H) is strongly enhanced and rho_xy(H) is suppressed, indicating nearly equal electron and hole contributions to the transport current. The data are inconsistent with uniformly distributed electron and hole concentrations (two-fluid model) but in excellent agreement with the recent theoretical prediction for inhomogeneously distributed electron and hole regions of equal mobility. At low temperatures and high magnetic fields rho_xx(H) saturates to a value ~h/e^2, with Hall conductivity << e^2/h, which may indicate a regime of localized v = 2 and v = -2 quantum Hall puddles.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2007-05-22T21:08:16.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.63.-b",
      "73.43.Qt",
      "81.05.Uw"
    ],
    "keywords": [
      "charge neutrality point",
      "charge transport",
      "inhomogeneity",
      "silicon dioxide substrates",
      "temperature"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2008,
      "month": "Feb",
      "volume": 77,
      "number": 8,
      "pages": "081402"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008PhRvB..77h1402C"
    }
  }
}